Monolithic integration of In0.2Ga0.8As vertical-cavity surface-emitting lasers with resonance-enhanced quantum well photodetectors

Electronics Letters

Volumn 32, Issue 13, 1996, Pages 1205-1207

  Ortiz, G G ^a   Hains, C P ^a   Cheng, J ^a   Hou, H Q ^b   Zolper, J C ^b  

^a UNIVERSITY OF NEW MEXICO   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

Integrated optoelectronics; Photodetectors; Vertical cavity surface emitting lasers

Indexed keywords

CURRENT DENSITY; INTEGRATED OPTOELECTRONICS; MONOLITHIC INTEGRATED CIRCUITS; OPTICAL INTERCONNECTS; PHOTODETECTORS; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

MONOLITHIC INTEGRATION; RESONANCE ENHANCED PHOTODETECTORS; VERTICAL CAVITY SURFACE EMITTING LASERS;

SEMICONDUCTOR LASERS;

EID: 0030167873     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960782     Document Type: Article

References (6)

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