Effect of collector structure on the FBSOA of the dielectrically-isolated ligbt

IEEE Transactions on Electron Devices

Volumn 45, Issue 5, 1998, Pages 1155-1161

  Nagapudi, Venkatesh ^a   Sunkavalli, Ravishankar ^a   Jayant Baliga, B ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

Dielectric isolation; Lateral IGBT; Power IC's

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN OF SOLIDS; GATES (TRANSISTOR); SEMICONDUCTOR DEVICE STRUCTURES;

FORWARD BIASED SAFE OPERATING AREA (FBSOA); LATERAL INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

BIPOLAR TRANSISTORS;

EID: 0032071085     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.669579     Document Type: Article

References (8)

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