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Volumn 36, Issue 5, 1989, Pages 993-1000

Transient Characteristics of n-Channel Hybrid Schottky Injection FET's

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRONS;

EID: 0024665562     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.299683     Document Type: Article
Times cited : (5)

References (9)
  • 1
    • 0021757034 scopus 로고
    • Lateral resurfed COMFET
    • M. Darwish and K. Board, “Lateral resurfed COMFET,” Electron. Lett., vol. 20, pp. 519-520, 1984.
    • (1984) Electron. Lett. , vol.20 , pp. 519-520
    • Darwish, M.1    Board, K.2
  • 2
    • 0021640208 scopus 로고
    • Comparison of high voltage devices for power integrated circuits
    • R. Jayaraman, V. Rumennik, B. Singer, and E. H. Stupp, “Comparison of high voltage devices for power integrated circuits,” in IEDM Tech. Dig., 1984, pp. 258-261.
    • (1984) IEDM Tech. Dig. , pp. 258-261
    • Jayaraman, R.1    Rumennik, V.2    Singer, B.3    Stupp, E.H.4
  • 4
    • 0022959121 scopus 로고
    • Fast switching lateral insulated gate transistor
    • P. A. Gough, M. R. Simpson, and V. Rumennik, “Fast switching lateral insulated gate transistor,” in IEDM Tech. Dig., 1986, pp. 218-221.
    • (1986) IEDM Tech. Dig. , pp. 218-221
    • Gough, P.A.1    Simpson, M.R.2    Rumennik, V.3
  • 5
    • 0022905780 scopus 로고
    • The SINFET: A Schottky injection MOS-gated power transistor
    • J. K. O. Sin, C. A. T. Salama, and L. Z. Hou, “The SINFET: A Schottky injection MOS-gated power transistor,” IEEE Trans. Electron Devices, vol. ED-33, pp. 1940-1947, 1986.
    • (1986) IEEE Trans. Electron Devices , vol.ED-33 , pp. 1940-1947
    • Sin, J.K.O.1    Salama, C.A.T.2    Hou, L.Z.3
  • 6
    • 0022957810 scopus 로고
    • Analysis and characterization of The hybrid Schottky injection field effect transistor
    • J. K. O. Sin, C. A. T. Salama, and L. Z. Hou, “Analysis and characterization of The hybrid Schottky injection field effect transistor,” in IEDM Tech. Dig., 1986, pp. 222-225.
    • (1986) IEDM Tech. Dig. , pp. 222-225
    • Sin, J.K.O.1    Salama, C.A.T.2    Hou, L.Z.3
  • 9
    • 84937658108 scopus 로고
    • A theory of transistor cutoff frequency (fT) falloff at high current density
    • C. T. Kirk, “A theory of transistor cutoff frequency (fT) falloff at high current density,” IEEE Trans. Electron Devices, vol. ED-9, p. 164, 1962.
    • (1962) IEEE Trans. Electron Devices , vol.ED-9 , pp. 164
    • Kirk, C.T.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.