The SINFET—A Schottky Injection MOS-Gated Power Transistor

IEEE Transactions on Electron Devices

Volumn 33, Issue 12, 1986, Pages 1940-1947

  Sin, Johnny K O ^a   Salama, C Andre T ^a   Hou, Li Zhang ^a  

^a UNIVERSITY OF TORONTO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, FIELD EFFECT;

HIGH LATCHUP RESISTANCE; LATERAL DIFFUSED MOS (LDMOS) TRANSISTORS (LDMOST); MATERIAL INSULATED GATE TRANSISTOR (LIGT); SCHOTTKY INJECTION FET (SINFET);

SEMICONDUCTOR DEVICES, MOS;

EID: 0022905780     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1986.22850     Document Type: Article

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