New large-signal model based on pulse measurement techniques for RF power MOSFET

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 1995, Pages 1553-1556

  Collantes, J M ^a   Raoux, J J ^a   Villotte, J P ^a   Quere, R ^a   Montoriol, G ^a   Dupis, F ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC CURRENT MEASUREMENT; HARMONIC ANALYSIS; INTERPOLATION; SEMICONDUCTOR DEVICE MODELS; THERMAL EFFECTS; VOLTAGE MEASUREMENT;

ACTIVE LOAD PULL MEASUREMENTS; HARMONIC BALANCE COMMERCIAL SIMULATOR; LARGE SIGNAL MODEL; PULSE MEASUREMENT TECHNIQUES; RF POWER MOSFET; SCATTERING PARAMETERS;

MOSFET DEVICES;

EID: 0029228246     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)