3D characterization of a W/TiN/Ti/Si contact structure using MULSAM

Surface and Interface Analysis

Volumn 26, Issue 6, 1998, Pages 461-470

  Roberts, R H ^a   Prutton, M ^a   Wilkinson, D K ^a   Barkshire, I R ^b   Hill, C J ^b   Pearson, P J ^b   Augustus, P D ^b   Skinner, D K ^b   Stribley, K ^c  

^a UNIVERSITY OF YORK   (United Kingdom)

^b GEC Marconi Materials Technology Ltd   (United Kingdom)

^c Plessey Semiconductors   (United Kingdom)

Author keywords

MULSAM; TEM; W TiN Ti Si contact structure

Indexed keywords

ELECTRON MICROSCOPY; INTERFACES (MATERIALS); OHMIC CONTACTS; SEMICONDUCTING SILICON; SEMICONDUCTOR MATERIALS; THREE DIMENSIONAL; TITANIUM; TITANIUM NITRIDE; TRANSMISSION ELECTRON MICROSCOPY; TUNGSTEN; ULSI CIRCUITS;

CONTACT STRUCTURE; MULTI SPECTRAL AUGER ELECTRON MICROSCOPY;

SURFACE STRUCTURE;

EID: 0032069667     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/(sici)1096-9918(19980515)26:6<461::aid-sia390>3.0.co;2-w     Document Type: Article

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