Gas-source molecular beam epitaxy of electronic devices

Materials Research Society Symposium - Proceedings

Volumn 421, Issue , 1996, Pages 3-13

  Beam III, E A ^a   Brar, B ^a   Broekaert, T P E ^a   Chau, H F ^a   Liu, W ^a   Seabaugh, A C ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TUNNELING; ELECTRONIC EQUIPMENT; EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; HETEROJUNCTION BIPOLAR TRANSISTORS; OPTICAL DEVICES; ORGANIC COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

GAS SOURCE MOLECULAR BEAM EPITAXY; HETEROJUNCTION FIELD EFFECT TRANSISTORS; RESONANT TUNNELING DIODES; TERTIARYBUTYLARSINE; TERTIARYBUTYLPHOSPHINE;

MOLECULAR BEAM EPITAXY;

EID: 0030377302     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-421-3     Document Type: Conference Paper

References (19)