Orientation dependence of optical gain in zincblende-GaN strained-quantum-well lasers

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 4, Issue 3, 1998, Pages 527-530

  Ohtoshi, T ^a,b   Niwa, A ^b   Kuroda, T ^b  

^a IEEE   (Japan)

^b HITACHI LTD   (Japan)

Author keywords

Gallium compounds; Optical polarization; Quantum well lasers; Semiconductor device modeling; Semiconductor lasers; Strain

Indexed keywords

CRYSTAL ORIENTATION; LIGHT POLARIZATION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; STRAIN;

LUTTINGER-KOHN MODEL; OPTICAL GAINS;

QUANTUM WELL LASERS;

EID: 0032066158     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.704113     Document Type: Article

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