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Volumn 36, Issue 6, 1997, Pages
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Theoretical analysis of the threshold current density in GaN/AlGaN strained quantum well lasers with a modulation-doped structure
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HITACHI LTD
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
BAND STRUCTURE;
CARRIER CONCENTRATION;
CURRENT DENSITY;
NITRIDES;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTOR DOPING;
MODULATION DOPED STRUCTURE;
TIGHT BINDING METHOD;
QUANTUM WELL LASERS;
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EID: 0031153066
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.36.l771 Document Type: Article |
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Times cited : (5)
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References (16)
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