Strain effects on interdiffusion in InAs1-xPx/InP heterostructures

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 4 A, 1996, Pages 2025-2034

  Tweet, Douglas J ^a   Matsuhata, Hirofumi ^a   Shioda, Ryu ^a   Oyanagi, Hiroyuki ^a   Kamei, Hidenori ^b  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

InP; Interdiffusion; OMVPE; Strain; TEM; X ray diffraction

Indexed keywords

ATOMIC FORCE MICROSCOPY; INTERDIFFUSION (SOLIDS); METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; RELAXATION PROCESSES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING INDIUM PHOSPHIDE; STRAIN; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY ANALYSIS; X RAY CRYSTALLOGRAPHY;

ENERGY DISPERSIVE X RAY ANALYSIS; NOMARSKI CONTRAST MICROSCOPY; PSEUDOMORPHIC ISLANDS;

HETEROJUNCTIONS;

EID: 0030120935     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.2025     Document Type: Article

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