Formation of reliable Pb (Ti, Zr) O3 thin-film capacitors for read/write endurance of ferroelectric non-volatile memories

IEICE Transactions on Electronics

Volumn E81-C, Issue 4, 1998, Pages 537-543

  Aoki, Katsuhiro ^a   Fukuda, Yukio ^a   Numata, Ken ^a   Nishimura, Akitoshi ^a  

^a Texas Instruments Japan Ltd   (Japan)

Author keywords

Fatigue; Ferroelectric; Indium; PZT; Sol gel; Thin fllm capacitor

Indexed keywords

CRYSTALLIZATION; DURABILITY; FATIGUE OF MATERIALS; FERROELECTRIC DEVICES; NONVOLATILE STORAGE; SEMICONDUCTING LEAD COMPOUNDS; SOL-GELS; THIN FILM DEVICES;

POLARIZATION FATIGUE;

CAPACITORS;

EID: 0032049947     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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