Electrochemical capacitance-voltage profiling of heterostructures using small contact areas

Semiconductor Science and Technology

Volumn 13, Issue 4, 1998, Pages 423-427

  Sell, B ^a   Gatzke, C ^a   Fernandez J M ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC PROPERTIES OF SOLIDS; ELECTROCHEMISTRY; ELECTRON TRANSPORT PROPERTIES; FIELD EFFECT TRANSISTORS; PHOTOLITHOGRAPHY; PHOTORESISTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING;

ELECTROCHEMICAL CAPACITANCE VOLTAGE PROFILING; MODULATION DOPED FIELD EFFECT TRANSISTORS (MODFET);

HETEROJUNCTIONS;

EID: 0032048915     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/13/4/012     Document Type: Article

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