A proposal for determination of band offset at a semiconductor heterojunction

Journal of Applied Physics

Volumn 79, Issue 4, 1996, Pages 2162-2164

  Lan, Sheng ^a   Yang, Cheng Qing ^a   Xu, Wan Jing ^a   Liu, Hong Du ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0039368902     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.361077     Document Type: Article

References (12)

1. H. Kroemer, W. Y. Chien, J. S. Harris, Jr., and D. D. Edwall, Appl. Phys. Lett. 36, 295 (1980).
2. H. Kroemer, Appl. Phys. Lett. 46, 504 (1985).
3. D. I. Babic and H. Kroemer, Solid-State Electron. 28, 1015 (1985).
4. S. R. Forrest, in Heterojunction Band Discontinuities, edited by F. Capasso and G. Margaritondo (North-Holland, Netherlands, 1987), p. 311.
5. M. A. Rao, E. J. Caine, H. Kroemer, S. I. Long, and D. I. Babic, J. Appl. Phys. 61, 643 (1987).
6. W. C. Johnson and P. T. Panousis, IEEE Trans. Electron Devices ED-18, 965 (1971).
7. T. Kobayashi, K. Taira, F. Nakamura, and H. Kawai, J. Appl. Phys. 65, 4898 (1989).
8. K. Kodama, M. Hoshino, K. Kitahara, M. Takikawa, and M. Ozeki, Jpn. J. Appl. Phys. 25, L127 (1986).
9. J. B. Lee, K.-S. Kim, and B.-D. Choe, Appl. Phys. Lett. 62, 2688 (1993).
10. M. Leroux, M. L. Fille, B. Gil, J. P. Landesman, and J. C. Garcia, Phys. Rev. B 47, 6465 (1993).
11. M. A. Hasse, M. J. Hafich, and G. Y. Robinson, Appl. Phys. Lett. 58, 616 (1991).
12. Y. Foulon, C. Priester, G. Allam, J. C. Carcia, and J. P. Landesman, J. Vac. Sci. Technol. B 10, 1754 (1992).