Characterization of extended defects in SiGe alloys formed by high dose Ge+ implantation into Si

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 120, Issue 1-4, 1996, Pages 156-160

  Cristiano, F ^a   Nejim, A ^a   De Mauduit, B ^b   Claverie, A ^b   Hemment, P L F ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b CEMES CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; CRYSTAL DEFECTS; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; GERMANIUM ALLOYS; ION BOMBARDMENT; MICROSCOPIC EXAMINATION; SILICON ALLOYS; SILICON CARBIDE; SILICON WAFERS;

SOLID PHASE EPITAXIAL REGROWTH;

ION IMPLANTATION;

EID: 0030566463     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(97)80005-5     Document Type: Article

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