Structural studies of ion beam synthesised SiGe/Si heterostructures for HBT applications

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 112, Issue 1-4, 1996, Pages 311-315

  Cristiano, F ^a   Nejim, A ^a   Hope, D A O ^b   Houlton, M R ^b   Hemment, P L F ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b DEFENCE SCIENCE AND TECHNOLOGY LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; HETEROJUNCTION BIPOLAR TRANSISTORS; ION BEAM LITHOGRAPHY; ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SYNTHESIS (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY;

END OF RANGE DEFECTS; ION BEAM SYNTHESIS;

HETEROJUNCTIONS;

EID: 0030563522     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(95)01004-1     Document Type: Article

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