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Volumn 166, Issue 2, 1998, Pages 581-586

Carbon nitride films deposited on 〈111〉 Si substrates by reactive excimer laser ablation

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; DEPOSITION; EXCIMER LASERS; LASER ABLATION; NITRIDES; PRESSURE EFFECTS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 0032046854     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199804)166:2<581::AID-PSSA581>3.0.CO;2-H     Document Type: Article
Times cited : (6)

References (15)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.