|
Volumn 166, Issue 2, 1998, Pages 581-586
|
Carbon nitride films deposited on 〈111〉 Si substrates by reactive excimer laser ablation
|
Author keywords
[No Author keywords available]
|
Indexed keywords
CRYSTAL ORIENTATION;
DEPOSITION;
EXCIMER LASERS;
LASER ABLATION;
NITRIDES;
PRESSURE EFFECTS;
RUTHERFORD BACKSCATTERING SPECTROSCOPY;
SCANNING ELECTRON MICROSCOPY;
SILICON WAFERS;
TRANSMISSION ELECTRON MICROSCOPY;
X RAY CRYSTALLOGRAPHY;
X RAY PHOTOELECTRON SPECTROSCOPY;
CARBON NITRIDE;
SEMICONDUCTING FILMS;
|
EID: 0032046854
PISSN: 00318965
EISSN: None
Source Type: Journal
DOI: 10.1002/(SICI)1521-396X(199804)166:2<581::AID-PSSA581>3.0.CO;2-H Document Type: Article |
Times cited : (6)
|
References (15)
|