SCOPUS 정보 검색 플랫폼

Semiconductor Science and Technology

Volumn 11, Issue 9, 1996, Pages 1354-1357

Effect of ion beam milling on the defect structure of CdTe

(3) Panin, G a,b Fernandez, P a Piqueras, J a

a UNIVERSIDAD COMPLUTENSE DE MADRID (Spain)

b INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; EMISSION SPECTROSCOPY; ION BEAMS; MILLING (MACHINING); SCANNING ELECTRON MICROSCOPY; SINGLE CRYSTALS;

CADMIUM VACANCIES; DEFECT STRUCTURE; ION BEAM MILLING; ION TREATMENT; LUMINESCENCE INTENSITY; LUMINESCENCE SPECTRA; TELLURIUM VACANCIES;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 0030247451 PISSN: 02681242 EISSN: None Source Type: Journal
DOI: 10.1088/0268-1242/11/9/018 Document Type: Article

Times cited : (18)

References (14)

1
- 0023420125
- Blackman M V, Charlton D E, Jenner M D, Purdy D R, Wotherspoon J T M, Elliot C T and White A M 1987 Electron Lett. 23 978
- (1987) Electron Lett. , vol.23 , pp. 978
- Blackman, M.V.¹ Charlton, D.E.² Jenner, M.D.³ Purdy, D.R.⁴ Wotherspoon, J.T.M.⁵ Elliot, C.T.⁶ White, A.M.⁷

2
- 84953021770
- Bahir G and Finkman E 1989 J. Vac. Sci. Technol. A 7 348
- (1989) J. Vac. Sci. Technol. A , vol.7 , pp. 348
- Bahir, G.¹ Finkman, E.²

3
- 5844370399
- Panin G N and Yakimov E B 1989 Sov. Phys.-Semicond. 23 840
- (1989) Sov. Phys.-Semicond. , vol.23 , pp. 840
- Panin, G.N.¹ Yakimov, E.B.²

4
- 0000550883
- Barbot J F, Kronewitz J and Schröter W 1990 Appl. Phys. Lett. 57 2689
- (1990) Appl. Phys. Lett. , vol.57 , pp. 2689
- Barbot, J.F.¹ Kronewitz, J.² Schröter, W.³

5
- 0141861850
- Chien Kuo-Fu, Fahrenbruch A L and Bube R H 1988 J. Appl. Phys. 64 2792
- (1988) J. Appl. Phys. , vol.64 , pp. 2792
- Chien, K.-F.¹ Fahrenbruch, A.L.² Bube, R.H.³

6
- 5544317594
- Blanchard C, Favre J, Barbot J F, Desoyer J C, Toulemonde M, Konczykowski M, Le Scoul D and Dessus J L 1990 J. Appl. Phys. 68 3237
- (1990) J. Appl. Phys. , vol.68 , pp. 3237
- Blanchard, C.¹ Favre, J.² Barbot, J.F.³ Desoyer, J.C.⁴ Toulemonde, M.⁵ Konczykowski, M.⁶ Le Scoul, D.⁷ Dessus, J.L.⁸

7
- 0027186918
- Hofmann D M, Städler W, Oettinger K, Meyer B K, Omling P, Salk M, Benz K W, Weigel E and Müller-Vogt G 1993 Mater. Sci. Eng. B 16 128
- (1993) Mater. Sci. Eng. B , vol.16 , pp. 128
- Hofmann, D.M.¹ Städler, W.² Oettinger, K.³ Meyer, B.K.⁴ Omling, P.⁵ Salk, M.⁶ Benz, K.W.⁷ Weigel, E.⁸ Müller-Vogt, G.⁹

8
- 0028515301
- Pal U, Piqueras J, Fernández P, Serrano M D and Diéguez E 1994 J. Appl. Phys. 76 3720
- (1994) J. Appl. Phys. , vol.76 , pp. 3720
- Pal, U.¹ Piqueras, J.² Fernández, P.³ Serrano, M.D.⁴ Diéguez, E.⁵

9
- 0000548911
- Dominguez-Adame F, Piqueras J and Fernández P 1991 Appl. Phys. Lett. 58 257
- (1991) Appl. Phys. Lett. , vol.58 , pp. 257
- Dominguez-Adame, F.¹ Piqueras, J.² Fernández, P.³

10
- 0015077204
- Casey H C and Jayson J S 1971 J. Appl. Phys. 42 2774
- (1971) J. Appl. Phys. , vol.42 , pp. 2774
- Casey, H.C.¹ Jayson, J.S.²

11
- 0041612441
- Pal U, Fernández P, Piqueras J, Serrano M D and Diéguez E 1994 Defect Recognition and Image Processing in Semiconductors and Devices (Inst. Phys. Conf. Ser. 135) 177
- (1994) Defect Recognition and Image Processing in Semiconductors and Devices (Inst. Phys. Conf. Ser. 135) , pp. 177
- Pal, U.¹ Fernández, P.² Piqueras, J.³ Serrano, M.D.⁴ Diéguez, E.⁵

12
- 0029309535
- Pal U, Fernández P and Piqueras J 1995 Mater. Lett. 23 227
- (1995) Mater. Lett. , vol.23 , pp. 227
- Pal, U.¹ Fernández, P.² Piqueras, J.³

13
- 0019937635
- Takebe T, Saraie J and Matsunami H 1982 J. Appl. Phys. 53 457
- (1982) J. Appl. Phys. , vol.53 , pp. 457
- Takebe, T.¹ Saraie, J.² Matsunami, H.³

14
- 0029357950
- Pal U, Fernández P, Piqueras J, Sochinskii N V and Diéguez E 1995 J. Appl. Phys. 78 1992
- (1995) J. Appl. Phys. , vol.78 , pp. 1992
- Pal, U.¹ Fernández, P.² Piqueras, J.³ Sochinskii, N.V.⁴ Diéguez, E.⁵

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.