Surface modification and imaging of hydrogen passivated silicon with a combined scanning electron/scanning tunneling microscope

Ultramicroscopy

Volumn 68, Issue 4, 1997, Pages 257-266

  Coope, R J N ^a   Tiedje, T ^a   Konsek, S L ^b   Pearsall, T P ^b  

^a UNIVERSITY OF BRITISH COLUMBIA   (Canada)

^b UNIVERSITY OF WASHINGTON   (United States)

Author keywords

Combined scanning electron scanning tunneling microscope; Nanolithography; Scanning tunneling microscope

Indexed keywords

DEGREES OF FREEDOM (MECHANICS); NANOTECHNOLOGY; PASSIVATION; SCANNING ELECTRON MICROSCOPY; SCANNING TUNNELING MICROSCOPY; SURFACE TREATMENT;

PARALLELOGRAM FLEXURE HINGES;

SILICON;

HYDROGEN; SILICON;

ARTICLE; DEVICE; DIAGNOSTIC IMAGING; IMAGE PROCESSING; NONHUMAN; PIEZOELECTRICITY; SAMPLING; SCANNING ELECTRON MICROSCOPY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR; SURFACE PROPERTY;

EID: 0031214848     PISSN: 03043991     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0304-3991(97)00034-X     Document Type: Article

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