Characteristics of scanning-probe lithography with a current-controlled exposure system

Applied Physics Letters

Volumn 72, Issue 13, 1998, Pages 1581-1583

  Ishibashi, Masayoshi ^a   Heike, Seiji ^a   Kajiyama, Hiroshi ^a   Wada, Yasuo ^a   Hashizume, Tomihiro ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC CURRENTS; ELECTRIC FIELDS; LANGMUIR BLODGETT FILMS; MATHEMATICAL MODELS; SCANNING ELECTRON MICROSCOPY; SCANNING TUNNELING MICROSCOPY; SILICON WAFERS;

ELECTRIC FLUX LINES; ELECTRON BEAM RESIST; EXPOSURE FEEDBACK SYSTEM; PROXIMITY EFFECT; SCANNING PROBE LITHOGRAPHY;

ELECTRON BEAM LITHOGRAPHY;

EID: 0032027868     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121121     Document Type: Article

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