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Volumn 83, Issue 5, 1998, Pages 2610-2618

Extension of the impedance field method to the noise analysis of a semiconductor junction: Analytical approach

Author keywords

[No Author keywords available]

Indexed keywords

DIFFERENTIAL EQUATIONS; ELECTRIC FIELDS; ELECTRIC IMPEDANCE; FIELD EFFECT TRANSISTORS; GREEN'S FUNCTION; MATHEMATICAL MODELS; NYQUIST DIAGRAMS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DIODES; SPURIOUS SIGNAL NOISE;

EID: 0032021722     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.367023     Document Type: Article
Times cited : (15)

References (15)
  • 7
    • 0040200757 scopus 로고
    • edited by J. P. Nougier Elsevier, Amsterdam
    • J. P. Nougier, in III-V Microelectronics, edited by J. P. Nougier (Elsevier, Amsterdam, 1991), p. 183.
    • (1991) III-V Microelectronics , pp. 183
    • Nougier, J.P.1
  • 9
    • 85034167282 scopus 로고    scopus 로고
    • note
    • For the hot-carrier regime the noise sources are modified, but as long as they will remain locally dependent on the field and charge concentrations our approach can be extended to that case. Some of the nonlocal effects, e.g., the drift-velocity overshoot, can also be taken into account by using the additional term of Price (Ref. 15) proportional to the field gradient (augmented drift-diffusion model).
  • 11
    • 85034198294 scopus 로고    scopus 로고
    • D and all the spatial profiles for |x| >L are flat
    • D and all the spatial profiles for |x| >L are flat.
  • 12
    • 4243281477 scopus 로고
    • Similar method of finding solutions of stochastic equations in different physical context was used by V. A. Kochelap, V. N. Sokolov, and N. A. Zakhleniuk, Phys. Rev. B 48, 2304 (1993).
    • (1993) Phys. Rev. B , vol.48 , pp. 2304
    • Kochelap, V.A.1    Sokolov, V.N.2    Zakhleniuk, N.A.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.