Hydrodynamic and Monte Carlo simulation of steady-state transport and noise in submicrometre n+nn+ silicon structures

Semiconductor Science and Technology

Volumn 11, Issue 6, 1996, Pages 865-872

  Starikov, E ^a   Shiktorov, P ^a   Gruzinskis V ^a   Gonzalez T ^b   Martin M J ^b   Pardo, D ^b   Reggiani, L ^c   Varani, L ^d  

^a CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

^b UNIVERSITY OF SALAMANCA   (Spain)

^c INFM   (Italy)

^d UNIVERSITÉ MONTPELLIER II   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; EFFICIENCY; ELECTRIC IMPEDANCE; HYDRODYNAMICS; MONTE CARLO METHODS; RELIABILITY; SPURIOUS SIGNAL NOISE;

CARRIER TRANSPORT;

SEMICONDUCTING SILICON;

EID: 0030166740     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/6/004     Document Type: Article

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