Spatial correlations across n+ n semiconductor junctions

Applied Physics Letters

Volumn 70, Issue 24, 1997, Pages 3248-3250

  Bulashenko, O M ^a   Gomila, G ^a   Rubi, J M ^a   Kochelap, V A ^b  

^a UNIVERSITY OF BARCELONA   (Spain)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; ELECTRIC FIELDS; ELECTRIC IMPEDANCE; GREEN'S FUNCTION; MATHEMATICAL MODELS; SEMICONDUCTOR DEVICES;

CHARGE CONCENTRATION; CROSS CORRELATION; IMPEDANCE FIELD; SPATIAL CORRELATIONS;

SEMICONDUCTOR JUNCTIONS;

EID: 0031162979     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119151     Document Type: Article

References (12)

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3. E. Starikov, P. Shikhtorov, V. Gružinskis, T. González, M. J. Martín, D. Pardo, L. Reggiani, and L. Varani, Semicond. Sci. Technol. 11, 865 (1996), and references therein.
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11. For the hot-carrier regime the noise sources are modified, but as long as they will remain locally dependent on n(x), E(x), our approach can be extended to that case. Some of the nonlocal effects, e.g., the drift-velocity overshoot, can also be taken into account by using the additional term of Price (Ref. 10) in Eq. (2) proportional to the field gradient (augmented drift-diffusion model). The phenomenological length coefficient L(E) will then appear in the Wronskian, but the formulas (6) and (7) will be unchanged.
12. P. J. Price, J. Appl. Phys. 63, 4718 (1988).