Epitaxial regrowth of C- and N-implanted silicon and α-quartz

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 136-138, Issue , 1998, Pages 263-267

  Harbsmeier, F ^a   Bolse, W ^a   Da Silva, M R ^b   Da Silva, M F ^c   Soares, J C ^c  

^a UNIVERSITY OF GÖTTINGEN   (Germany)

^b UNIVERSITY OF LISBON   (Portugal)

^c INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

Author keywords

Epitaxial regrowth; Ion irradiation; Quartz; Si; SiO2

Indexed keywords

ANNEALING; CARBON; CRYSTALLIZATION; DIFFUSION IN SOLIDS; EPITAXIAL GROWTH; HIGH TEMPERATURE OPERATIONS; NITROGEN; QUARTZ; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON;

EPITAXIAL REGROWTH; ION IRRADIATION;

ION IMPLANTATION;

EID: 0032020870     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(97)00871-9     Document Type: Article

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