Charge centroid and origin of generated and intrinsic bulk defects at 293 and 100 K in insulated gate field effect transistors

Journal of Applied Physics

Volumn 81, Issue 3, 1997, Pages 1566-1574

  Kim, H S ^a   Williams, C K ^a,b   Reisman, A ^a  

^a North Carolina State University   (United States)

^b MCNC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0007216096     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.364087     Document Type: Article

References (30)

1. S. A. Abbas and R. C. Dockerty, Appl. Phys. Lett. 27, 147 (1975).
2. T. H. Ning, C. M. Osburn, and C. N. Yu, Appl. Phys. Lett. 29, 198 (1976).
3. C. Hu, S. C. Tam, F.-C. Hsu, P.-K. Ko, T.-Y. Chan, and K. W. Terrill, IEEE Trans Electron Devices ED-32, 375 (1985).
4. A. Reisman and C. J. Merz, J. Electrochem. Soc. 130, 1384 (1983).
5. T. H. Ning, J. Appl. Phys. 49, 4077 (1978).
6. A. Reisman, C. J. Merz, J. R. Maldonado, and W. W. Molzen, J. Electrochem. Soc. 131, 1404 (1984).
7. J. R. Maldonado, A. Reisman, H. Lezec, C. K. Williams, and S. S. Iyer, J. Electrochem. Soc. 133, 628 (1986).
8. C. K. Williams, A. Reisman, P. Bhattacharya, and W. Ng, J. Appl. Phys. 64, 1145 (1988).
9. P. K. Bhattacharya, A. Reisman, and M. C. Chen, J. Electron. Mater. 17, 273 (1988).
10. C. K. Williams, A. Reisman, and P. Bhattacharya, J. Appl. Phys. 66, 379 (1989).
11. M. Walters and A. Reisman, J. Appl. Phys. 67, 2992 (1990).
12. M. Walters, and A. Reisman, J. Electrochem. Soc. 138, 2756 (1991).
13. A. Badihi, B. Eitan, I. Cohen, and J. Shappir, Appl. Phys. Lett. 40, 396 (1982).
14. Y. Nissan-Cohen, J. Shappir, and D. Frohman-Bentchkowsky, J. Appl. Phys. 60, 2024 (1986).
15. D. J. DiMaria and J. W. Stasiak, J. Appl. Phys. 65, 2342 (1989).
16. N. Nishida and S. E. Thompson, J. Appl. Phys. 69, 3986 (1991).
17. D. A. Buchanan and D. J. DiMaria, J. Appl. Phys. 67, 7439 (1990).
18. R. Bright and A. Reisman, J. Electrochem. Soc. 140, 2065 (1993).
19. H. S. Kim, C. K. Williams, and A. Reisman, J. Electrochem. Soc. 142, 979 (1995).
20. H. S. Kim, C. K. Williams, and A. Reisman (unpublished).
21. H. S. Kim, A. Reisman, and C. K. Williams (unpublished).
22. B. Doyle, M. Bourcerie, J.-C. Marchetaux, and A. Boudou, IEEE Trans. Electron Devices 37, 744 (1990).
23. N. S. Saks, M. G. Ancona, and J. A. Modolo, IEEE Trans. Nucl. Sci. NS-31, 1249 (1984).
24. S. T. Chang and S. A. Lyon, Appl. Phys. Lett. 48, 136 (1986).
25. T. R. Oldham, A. J. Lelis, and F. B. McLean, IEEE Trans. Nucl. Sci. NS-33, 1203 (1986).
26. A. Reisman, C. K. Williams, and J. R. Maldonado, J. Appl. Phys. 62, 868 (1987).
27. T. H. Ning, J. Appl. Phys. 49, 5997 (1978).
28. MMR Technology Inc., 1400 Stierlin Road, Suite A-5, Mount View, CA 94043.
29. M. Walters and A. Reisman, J. Electron. Mater. 19, 711 (1990).
30. L. Lipkin, A. Reisman, and C. K. Williams, J. Appl. Phys. 68, 4620 (1990).