Realization of high-performance MOSFETs with gate lengths of 0.1 μm or less

Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)

Volumn 79, Issue 10, 1996, Pages 67-78

  Momose, Hisayo Sasaki ^a   Ono, Mizuki ^a   Yoshitomi, Takashi ^a   Ohguro, Tatsuya ^a   Saito, Masanobu ^a   Iwai, Hiroshi ^a   Nakamura, Shin Ichi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Downsizing; High performance; MOSFET

Indexed keywords

CAPACITANCE; ELECTRIC RESISTANCE; GATES (TRANSISTOR); THIN FILMS;

LOW DOPED THIN SILICON EPITAXIAL LAYER; PARASITIC RESISTANCE;

MOSFET DEVICES;

EID: 0030257826     PISSN: 8756663X     EISSN: None     Source Type: Journal    
DOI: 10.1002/ecjb.4420791008     Document Type: Article

References (15)

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