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Volumn 41, Issue 5, 1998, Pages 519-524

Defect-mediated kinetic roughening in low-temperature MBE growth of Si/Si (111)

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Indexed keywords


EID: 0032018732     PISSN: 02955075     EISSN: None     Source Type: Journal    
DOI: 10.1209/epl/i1998-00184-7     Document Type: Article
Times cited : (4)

References (29)
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    • Eaglesham, D.J.1    Gilmer, G.H.2
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    • EAGLESHAM D. J., GOSSMANN H. J. and CERRULLO M., Phys. Rev. Lett., 65 (1990) 1227; EAGLESHAM D. J. and GILMER G. H., in ref. [2]; EAGLESHAM D. J., J. Appl. Phys., 77 (1995) 3597.
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    • Eaglesham, D.J.1
  • 20
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    • EHRLICH G. and HUDDA F. G., J. Chem. Phys., 44 (1966) 1039; SCHWOEBEL R. L. and SHIPSEY E. J., J. Appl. Phys., 37 (1966) 3682;
    • (1966) J. Chem. Phys. , vol.44 , pp. 1039
    • Ehrlich, G.1    Hudda, F.G.2
  • 24
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    • and references therein
    • POLITI P., J. Phys. I, 7 (1997) 797 and references therein.
    • (1997) J. Phys. I , vol.7 , pp. 797
    • Politi, P.1
  • 26
    • 0039876224 scopus 로고
    • edited by P. J. DOBSON and P. K. LARSON (Plenum Press, New York)
    • The relevance of this in situ RHEED technique in the surface roughness determination has been checked by us with other ex situ techniques as AFM and HREM. Its advantages and limits have been discussed extensively in [10], [13]. This phenomenon has also been discussed by TRINGIDES M. C. and LAGALLY M. G., in RHEED and REM of Surfaces, edited by P. J. DOBSON and P. K. LARSON (Plenum Press, New York) 1988. Since the publication of our previous papers [10], [13] other authors have reproduced identical results [11] with their own techniques or successfully used the same RHEED technique on other systems [14].
    • (1988) RHEED and REM of Surfaces
    • Tringides, M.C.1    Lagally, M.G.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.