Characterization of highly strained silicon-germanium alloys grown on silicon substrates using spectroscopic ellipsometry

Thin Solid Films

Volumn 313-314, Issue , 1998, Pages 167-171

  Lee, Hosun ^a  

^a Kyung Hee University   (South Korea)

Author keywords

Band gap; Dielectric function; Silicon germanium; Spectroscopic ellipsometry; Strain

Indexed keywords

ELASTICITY; ELLIPSOMETRY; ENERGY GAP; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SPECTROMETRY; STRAIN;

DIELECTRIC FUNCTIONS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0032003725     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)00805-5     Document Type: Article

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