SCOPUS 정보 검색 플랫폼

Volumn 117-118, Issue , 1997, Pages 729-734

Analysis of GaAs/SiN interface states and hot carrier annealing effects in GaAs MESFET

(9) Sasaki, Hajime a,b Hayashi, Kazuo a Fujioka, Takashi a Mizuguchi, Kiyoshi a Osaki, Tomoyuki b Sugahara, Kazunori b Konishi, Ryosuke b Kasada, Hirofumi b Ando, Koshi b

a MITSUBISHI ELECTRIC CORPORATION (Japan)

b TOTTORI UNIVERSITY (Japan)

Author keywords

Drain current transient; GaAs MESFET; Hot carrier; Interface state; Reliability

Indexed keywords

ANNEALING; ELECTRON ENERGY LEVELS; ENERGY GAP; HIGH TEMPERATURE EFFECTS; HIGH TEMPERATURE OPERATIONS; HOT CARRIERS; INTERFACES (MATERIALS); LIGHT EMISSION; PHOTOELECTRICITY; SEMICONDUCTING GALLIUM ARSENIDE; SILICON NITRIDE; TRANSIENTS;

OPTICAL BEAM INDUCED CURRENTS (OBIC); PLASMA INDUCED INTERFACE STATES;

MESFET DEVICES;

EID: 0031548550 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(97)80173-0 Document Type: Article

Times cited : (2)

References (12)

1
- 0001226170
- S.R. Blight, R.H. Wallis, H. Thomas, IEEE Trans. Electron Devices ED-33 (1986) 1447.
- (1986) IEEE Trans. Electron Devices , vol.ED-33 , pp. 1447
- Blight, S.R.¹ Wallis, R.H.² Thomas, H.³

2
- 0025431836
- J.H. Zhao, IEEE Trans. Electron Devices ED-37 (1990) 1235.
- (1990) IEEE Trans. Electron Devices , vol.ED-37 , pp. 1235
- Zhao, J.H.¹

3
- 0028699293
- Y. Kohno, M. Matsubayashi, M. Komaru, H. Takano, O. Ishihara, S. Mitsui, IEEE GaAs IC Symposium Digest, 1994, p. 263.
- (1994) IEEE GaAs IC Symposium Digest , pp. 263
- Kohno, Y.¹ Matsubayashi, M.² Komaru, M.³ Takano, H.⁴ Ishihara, O.⁵ Mitsui, S.⁶

4
- 0025417219
- C. Canali, E. Corti, B. Gabrielli, F. Magistali, A. Paccagnella, M. Sangalli, C. Tedesco, IEEE Trans. Electron Devices ED-37 (1990) 1163.
- (1990) IEEE Trans. Electron Devices , vol.ED-37 , pp. 1163
- Canali, C.¹ Corti, E.² Gabrielli, B.³ Magistali, F.⁴ Paccagnella, A.⁵ Sangalli, M.⁶ Tedesco, C.⁷

5
- 0023287854
- J.M. Dumas, F. Garat, D. Lecrosnier, Electron. Lett. 23 (1987) 139.
- (1987) Electron. Lett. , vol.23 , pp. 139
- Dumas, J.M.¹ Garat, F.² Lecrosnier, D.³

6
- 0346964641
- J.C.M. Hwang, IEEE GaAs IC Symposium Digest, 1995, p. 81.
- (1995) IEEE GaAs IC Symposium Digest , pp. 81
- Hwang, J.C.M.¹

7
- 0028699549
- Y.A. Tkachenko, Y. Lan, D.S. Whitefield, C.J. Wei, J.C.M. Hwang, T.D. Harris, R.D. Grober, D.M. Hwang, L. Aucoin, S. Shanfield, IEEE GaAs IC Symposium Digest, 1994, p. 259.
- (1994) IEEE GaAs IC Symposium Digest , pp. 259
- Tkachenko, Y.A.¹ Lan, Y.² Whitefield, D.S.³ Wei, C.J.⁴ Hwang, J.C.M.⁵ Harris, T.D.⁶ Grober, R.D.⁷ Hwang, D.M.⁸ Aucoin, L.⁹ Shanfield, S.¹⁰

8
- 0026838525
- A. Watanabe, K. Fujimoto, M. Oda, T. Nakatsuka, A. Tamura, IEEE International Reliability Physics Proceedings, 1992, p. 127.
- (1992) IEEE International Reliability Physics Proceedings , pp. 127
- Watanabe, A.¹ Fujimoto, K.² Oda, M.³ Nakatsuka, T.⁴ Tamura, A.⁵

9
- 0026902635
- T. Sonoda, S. Sakamoto, N. Kasai, M. Yamanouchi, S. Takamiya, Y. Kashimoto, Jpn. J. Appl. Phys. 31 (1992) 2374.
- (1992) Jpn. J. Appl. Phys. , vol.31 , pp. 2374
- Sonoda, T.¹ Sakamoto, S.² Kasai, N.³ Yamanouchi, M.⁴ Takamiya, S.⁵ Kashimoto, Y.⁶

10
- 0025403710
- K. Hui, C. Hu, P. George, P.K. Ko, IEEE Trans. Electron Devices Lett. EDL-11 (1990) 113.
- (1990) IEEE Trans. Electron Devices Lett. , vol.EDL-11 , pp. 113
- Hui, K.¹ Hu, C.² George, P.³ Ko, P.K.⁴

11
- 0027558843
- C. Canali, A. Neviani, C. Tedesco, E. Zanoni, A. Cetronio, C. Lanzieri, IEEE Trans. Electron Devices ED-40 (1993) 498.
- (1993) IEEE Trans. Electron Devices , vol.ED-40 , pp. 498
- Canali, C.¹ Neviani, A.² Tedesco, C.³ Zanoni, E.⁴ Cetronio, A.⁵ Lanzieri, C.⁶

12
- 0028721428
- C. Hanson, H. Fu, M. Golio, IEEE GaAs IC Symposium Digest, 1994, p. 255.
- (1994) IEEE GaAs IC Symposium Digest , pp. 255
- Hanson, C.¹ Fu, H.² Golio, M.³

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