Near-band-edge optical properties of molecular beam epitaxy grown ZnSe epilayers on GaAs by modulation spectroscopy

Journal of Applied Physics

Volumn 83, Issue 3, 1998, Pages 1664-1669

  Tu, R C ^a   Su, Y K ^a   Li, C F ^b   Huang, Y S ^b   Chou, S T ^c   Lan, W H ^d   Tu, S L ^d   Chang, H ^d  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^c NATIONAL DEFENSE UNIVERSITY   (Taiwan)

^d CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; INTERFACES (MATERIALS); LIGHT MODULATION; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; STRAIN; TEMPERATURE; THERMAL EXPANSION;

BIAXIAL TENSILE STRAIN; CONTACTLESS ELECTROREFLECTANCE; ENERGY SPLITTING; PHOTOREFLECTANCE; PIEZOREFLECTANCE SPECTRA; VALENCE BAND;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0031996618     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366882     Document Type: Article

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