Comparison of the band gap of porous silicon as measured by photoelectron spectroscopy and photoluminescence

Materials Research Society Symposium - Proceedings

Volumn 358, Issue , 1995, Pages 441-446

  van Buuren, T ^a   Eisebitt, S ^a   Patitsas, S ^a   Ritchie, S ^a   Tiedje, T ^a   Young, J F ^a   Gao, Yuan ^a  

^a UNIVERSITY OF BRITISH COLUMBIA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC OXIDATION; CURRENT DENSITY; EMISSION SPECTROSCOPY; ENERGY GAP; GAS LASERS; INTERFEROMETERS; LIGHT EMISSION; OPTICAL PROPERTIES; PHOTOELECTRON SPECTROSCOPY; SILICON SENSORS; SPECIMEN PREPARATION;

ARGON ION LASERS; ELECTROCHEMICAL ANODIZATION; L ABSORPTION EDGE; NITROGEN AMBIENT; PHOTOLUMINESCENCE SPECTROSCOPY;

POROUS SILICON;

EID: 0029214673     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)