On the temperature dependence of the InP(001) bulk and surface dielectric function

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1996, Pages 586-589

  Zorn, M ^a   Trepk, T ^a   Zettler, J T ^a   Meyne, C ^a   Knorr, K ^a   Wethkamp, Th ^a   Richter, W ^a   Junno, B ^a   Miller, M ^a   Samuelson, L ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CHEMICAL BEAM EPITAXY; CRYSTAL ORIENTATION; DIELECTRIC PROPERTIES; ELLIPSOMETRY; METALLORGANIC VAPOR PHASE EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR GROWTH; SPECTROMETERS; THERMAL EFFECTS;

DIELECTRIC FUNCTIONS; LINE SHAPE ANALYSIS; REFLECTANCE ANISOTROPY SPECTROMETER; ROTATING ANALYZER TYPE ELLIPSOMETER; SPECTROSCOPIC ELLIPSOMETRY; SURFACE DIELECTRIC ANISOTROPY;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0029700565     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (15)