Modeling and realization of an amorphous silicon device with negative differential resistance

IEEE Transactions on Electron Devices

Volumn 45, Issue 1, 1998, Pages 270-276

  Caputo, Domenico ^a   De Cesare, Giampiero ^a   Palma, Fabrizio ^a  

^a SAPIENZA UNIVERSITY OF ROME   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CARRIER CONCENTRATION; CHARGE CARRIERS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT CONTROL; HETEROJUNCTIONS; HYSTERESIS; NEGATIVE RESISTANCE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING;

AMORPHOUS SILICON DEVICES;

SEMICONDUCTOR SWITCHES;

EID: 0031672443     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.658841     Document Type: Article

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