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Physical Review Letters

Volumn 66, Issue 14, 1991, Pages 1918-1921

Quantized electron transport in amorphous-silicon memory structures

(6) Hajto, J a Owen, A E a Gage, S M a Snell, A J a Lecomber, P G b Rose, M J b

a UNIVERSITY OF EDINBURGH (United Kingdom)

b UNIVERSITY OF DUNDEE (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001170806 PISSN: 00319007 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevLett.66.1918 Document Type: Article

Times cited : (37)

References (7)

1
- 0020116291
- (1982) IEE Proc. Part I: Solid State Electron Devices , vol.129 , pp. 51-54
- Owen, A.E.¹ LeComber, P.G.² Sarrabayrouse, G.³ Spear, W.E.⁴

2
- 0024810188
- Amorphous silicon analogue memory devices
- (1989) Journal of Non-Crystalline Solids , vol.115 , pp. 168
- Rose, M.J.¹ Hajto, J.² LeComber, P.G.³ Gage, S.M.⁴ Choi, W.K.⁵ Snell, A.J.⁶ Owen, A.E.⁷

3
- 0024780693
- (1989) J. Non-Cryst. Solids , vol.115 , pp. 171
- Gage, S.M.¹ Hajto, J.² Reynolds, S.³ Choi, W.K.⁴ Rose, M.J.⁵ LeComber, P.G.⁶ Snell, A.J.⁷ Owen, A.E.⁸

4
- 0022240663
- The switching mechanism in amorphous silicon junctions
- (1985) Journal of Non-Crystalline Solids , vol.77-78 , pp. 1373
- LeComber, P.G.¹ Owen, A.E.² Spear, W.E.³ Hajto, J.⁴ Snell, A.J.⁵ Choi, W.K.⁶ Rose, M.J.⁷ Reynolds, S.⁸

5
- 84927433105
- H. van Houten, C. W. J. Beenakker, and B. J. van Wees (to be published); in Semiconductors and Semimetals, edited by M. A. Reed (Academic, New York, 1990).

6
- 0001529854
- (1988) Phys. Rev. Lett. , vol.60 , pp. 848
- van Wees, B.J.¹ van Houten, H.² Beenakker, C.W.J.³ Williamson, J.G.⁴ Kouwenhoven, L.P.⁵ van der Marel, D.⁶ Foxon, C.T.⁷

7
- 84871329493
- and G.
- (1988) J. Phys. C , vol.21 , pp. L887
- Wharam, D.A.¹ Pepper, M.² Ahmed, H.³ Frost, J.E.F.⁴ Hasko, D.G.⁵ Peacock, D.C.⁶ Ritchie, D.A.⁷ Jones, A.C.⁸

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.