A switching device based on a-Si:H n-i-δp-i-n stacked structure: modeling and characterization

IEEE Transactions on Electron Devices

Volumn 43, Issue 12, 1996, Pages 2109-2112

  Caputo, Domenico ^a   De Cesare, Giampiero ^a  

^a SAPIENZA UNIVERSITY OF ROME   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRON EMISSION; ELECTRONS; MATHEMATICAL MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS; SWITCHING FUNCTIONS;

ACTIVE MATRIX DISPLAY; SWITCHING DEVICE; THERMIONIC EMISSION;

SEMICONDUCTOR SWITCHES;

EID: 0030406225     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.544381     Document Type: Article

References (10)

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