Studies of multicomponent oxide films and layered heterostructure growth processes via in situ, time-of-flight ion scattering and direct recoil spectroscopy

Annual Review of Materials Science

Volumn 28, Issue 1, 1998, Pages 375-396

  Auciello, Orlando ^a   Krauss, Alan R ^a   Im, Jaemo ^a   Schultz, J Albert ^b  

^a ARGONNE NATIONAL LABORATORY   (United States)

^b Lonwerks   (United States)

Author keywords

Ferroelectric films; Heterostructures; High temperature superconducting films; Sputter deposition

Indexed keywords

DIELECTRIC FILMS; ELECTRODES; FERROELECTRIC MATERIALS; HETEROJUNCTIONS; HIGH TEMPERATURE SUPERCONDUCTORS; OXIDES; SEMICONDUCTING FILMS; SPECTROSCOPIC ANALYSIS; SPUTTER DEPOSITION; SUPERCONDUCTING FILMS; SURFACE STRUCTURE; THIN FILM DEVICES;

DIRECT RECOIL SPECTROSCOPY; ION SCATTERING; MULTICOMPONENT OXIDE FILMS;

FILM GROWTH;

EID: 0031636066     PISSN: 00846600     EISSN: None     Source Type: Journal    
DOI: 10.1146/annurev.matsci.28.1.375     Document Type: Article

References (52)

1. Zuleeg R, ed. 1995. Integrated Ferroelectronics Vol. 6-8
2. Myers ER, Kingon AI, eds. 1990. Ferroelectric Thin Films I, MRS Symp. Proc. Vol. 200. Pittsburgh: Mater. Res. Soc.
3. Kingon AI, Myers ER, Tuttle B, eds. 1991. Ferroelectric Thin Films II, MRS Symp. Proc. Vol. 243. Pittsburgh: Mater. Res. Soc.
4. Kingon AI, Myers ER, Tuttle B, eds. 1993. Ferroelectric Thin Films III, MRS Symp. Proc. Vol. 361. Pittsburgh: Mater. Res. Soc.
5. Tuttle B, Desu S, Ramesh R, Shiosaki T, eds. 1995. Ferroelectric Thin Films IV, MRS Symp. Proc. Vol. 361. Pittsburgh: Mater. Res. Soc.
6. Auciello O, Waser R. 1995. Science and Technology of Electroceramic Thin Films, NATO/ASI Book Series E 284. The Netherlands: Kluwer
7. Ramesh R, Auciello O, Keramidas VG, Dat R. 1995. Science and Technology of Electroceramic Thin Films, NATO/ASI Book Series E 284, ed. O Auciello, R Waser, p. 1. The Netherlands: Kluwer
8. Auciello O, Dat R, Ramesh R. 1996. In Ferroelectric Thin Films: Synthesis and Basic Properties, ed. CA Paz de Araujo, JF Scott, GW Taylor, pp. 525-65. London: Gordon & Breach
9. de Keijser M, Dormans D. 1996. MRS Bull. 21:37
10. Dey SK. 1996. See Ref. 5, pp. 329-89
11. 7a. Dey SK, Alluri PV. 1996. MRS Bull. 21:44
12. Auciello O, Gifford KD, Kingon AI. 1994. Appl. Phys. Lett. 64:2873
13. MeInick BM, Gregory J, Paz de Araujo CA. 1995. Integr. Ferroelectr. 11:505
14. Jones RE Jr, Zurcher P, Chu P, Taylor DJ, Zafar S, et al. 1997. Integr. Ferroelectr. 15:199
15. Scott JF, Ross FM, Paz de Araujo CA, Scott MC, Huffman M. 1996. MRS Bull. 21:33
16. Auciello O. 1997. Integr. Ferroelectr. 15:211
17. Auciello O, Krauss AR, Gifford KD. 1996. See Ref. 5, p. 393
18. Smolenskii GA, Isupov VA, Agranovskaya AI. 1959. Sov. Phys. Solid. State 1:1969
19. Thomas D, Auciello O, Kingon AI, Waser R, Schumacher M. 1997. Integr. Ferroelectr. 15:51
20. Lee JK, Song TK, Jung HJ. 1997. Integr. Ferroelectr. 15:115
21. Krauss AR, Lin Y, Auciello O, Lamich GJ, Gruen DM, et al. 1994. J. Vac. Sci. Technol. A12:1943
22. Lin Y, Krauss AR, Auciello O, Nishino Y, Gruen DM, et al. 1994. J. Vac. Sci. Technol. A12:1557
23. Auciello O, Krauss AR, Lin Y, Chang RPH, Gruen DM. 1994. Mater. Res. Soc. Proc. Epitaxial Oxide Thin Films and Heterostructures, ed. DK Fork, JM Philips, R Ramesh, RM Wolf RM, p. 385. Pittsburgh: Mater. Res. Soc.
24. Krauss AR, Auciello O, Lin Y, Chang RPH, Gruen DM. 1995. Integr. Ferroelectr. 8:129
25. Auciello O, Krauss AR, Schultz JA. 1995. MRS Bull. 20:18
26. Krauss AR, Auciello O. 1990. U.S. Patent No 4,923,585
27. Krauss AR, Auciello O, Kingon AI, Ameen MS, Liu YL, et al. 1990. Appl. Surf. Sci. 46:67
28. Smith DP. 1967. J. Appl. Phys. 38:340
29. Bhattacharya RS, Eckstein W, Verbeek H. 1980. Surf. Sci. 93:563
30. Taglauer E, Englert W, Heiland W, Jackson DP. 1980. Phys. Rev. Lett. 45:740
31. Marchut L, Buck TM, Wheatley GH, McMahon CJ. 1984. Surf. Sci. 141:549
32. Rabalais JW, Chen J. 1986. J. Chem. Phys. 85:3617
33. Niehus H. 1987. J. Vac. Sci. Technol. A5:751
34. Bird JR, Williams JS. 1989. Ion Beams for Materials Analysis. Canberra, Australia: Academic
35. Schmidt HK, Anderson LR, Schultz JA 1988-89. Appl. Surf. Sci. 35:274
36. Hagstrum HD. 1954. Phys. Rev. 96:336
37. Schmidt HK, Anderson LR, Schultz JA. 1993. J. Am. Ceram. Soc. 76:284
38. Poschenrieder WP. 1972. Int. J. Mass Spectrom. Ion Phys. 9:357
39. Waters K, Bensaoula A, Schultz JA, EipersSmith K, Freundlich A. 1993. J. Cryst. Growth, 127:972
40. Schultz JA, Schmidt HK. 1992. U.S. Patent No. 5,087,815
41. Krauss AR, Krohn V. 1980. Mass Spectrometry 6, Specialist Periodic Rep. London: R. Soc. Chem.
42. Hammond MS, Schultz JA, Krauss AR 1995. J. Vac. Sci. Technol. A13:1136
43. Auciello O, Krauss AR, Schultz JA, Smentkowski V, Holecek J. 1998. Appl. Phys. Lett. Submitted
44. Im J, Krauss AR, Lin Y, Schultz JA, Auciello O, et al. 1996. Nucl. Instrum. Meth. B118:772
45. Krauss AR, Rangaswamy M, Lin Y, Gruen DM, Schultz JA, et al. 1993. Multicomponent and Multilayered Thin Films for Advanced Microtechnologies: Techniques, Fundamentals and Devices, ed. O Auciello, J Engemann, p. 251. The Netherlands: Kluwer
46. Schmidt HK, Schultz JA, Zheng Z. 1991. Diamond and Diamond-Like Coatings, ed. RE Clausing, p. 669. New York: Plenum
47. Aono M, Hou Y, Oshima C, Ishizawa Y. 1982. Phys. Rev. Lett. 49:567
48. Krauss AR, Im J, Schultz JA, Smentkowski VS, Waters K, et al. 1995. Thin Solid Films 270:130
49. Phelps AV. 1991. J. Phys. Chem. Ref. Data 20:557
50. Al-Shareef HN, Dimos D, Boyle TJ, Warren WL, Tuttle BA. 1996. Appl. Phys. Lett. 68:690
51. Paz de Araujo CA, Cuchiaro JD, Scott MC, McMillan LD. 1993. Int. Patent WO93/12542
52. Darken LS, Gurry RW. 1953. Physical Chemistry of Metals. New York: McGrawHill. p. 349