SCOPUS 정보 검색 플랫폼

Volumn 40, Issue 1-8, 1996, Pages 647-651

Non-uniform strain relaxation in InxGa1-xAs layers

(12) Alvarez, A L a Calle, F a Sacedon A a Calleja, E a Munoz E a Garcia R b Gonzalez L b Gonzalez Y b Colson, H G c Kidd, P c Beanland, R d Goodhew, P d

a UNIVERSIDAD POLITÉCNICA DE MADRID (Spain)

b INSTITUTO DE MICROELECTRÓNICA DE MADRID (Spain)

c UNIVERSITY OF SURREY (United Kingdom)

d UNIVERSITY OF LIVERPOOL (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; MORPHOLOGY; RAMAN SPECTROSCOPY; RELAXATION PROCESSES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SUBSTRATES; SURFACE ROUGHNESS; SURFACES;

OPTICAL PHONON FREQUENCY; STRAIN RELAXATION PROCESS; TALYSTEP MEASUREMENT;

SEMICONDUCTING FILMS;

EID: 0029719852 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/0038-1101(95)00380-0 Document Type: Article

Times cited : (4)

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