Ti-interlayer mediated epitaxy of CoSi2 with Ti capping

Materials Research Society Symposium - Proceedings

Volumn 402, Issue , 1996, Pages 173-178

  Tung, R T ^a   Schrey, F ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; EPITAXIAL GROWTH; FABRICATION; NUCLEATION; OXIDES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; SURFACES; TITANIUM; TRANSMISSION ELECTRON MICROSCOPY;

CHANNELING RUTHERFORD BACKSCATTERING SPECTROSCOPY; RANDOM RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICIDE REACTION; TITANIUM INTERLAYER MEDIATED EPITAXY METHOD;

COBALT COMPOUNDS;

EID: 0029735342     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)