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Volumn 42, Issue 6, 1997, Pages 705-710

Mobility measurement in current filaments

Author keywords

Current filament; Electron mobility; Hall angle; Hall factor

Indexed keywords

ELECTRIC CURRENTS; ELECTRON TRANSPORT PROPERTIES; GALVANOMAGNETIC EFFECTS; HALL EFFECT;

EID: 0031382406     PISSN: 00017043     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (3)

References (18)
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  • 2
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    • Reconstruction of the spatial structure of current filaments in n-GaAs in a magnetic field
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  • 3
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    • Observation of a Large-Scale Sheetlike Current Filament in a Thin n-GaAs Layer
    • AOKI K., RAU U., PEINKE J., PARISI J., HUEBENER R.P.: Observation of a Large-Scale Sheetlike Current Filament in a Thin n-GaAs Layer. J. Phys. Soc. Jpn. 59, 420-423 (1990).
    • (1990) J. Phys. Soc. Jpn. , vol.59 , pp. 420-423
    • Aoki, K.1    Rau, U.2    Peinke, J.3    Parisi, J.4    Huebener, R.P.5
  • 5
    • 0001225990 scopus 로고
    • Low-temperature electron mobility studied by cyclotron resonance in ultrapure GaAs crystals
    • KOZHEVNIKOV M., ASHKINADZE B.M., COHEN E., RON A.: Low-temperature electron mobility studied by cyclotron resonance in ultrapure GaAs crystals. Phys. Rev. B 52, 17165-17171 (1995).
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    • Self-oscillations at photoinduced impurity breakdown in GaAs
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    • Simulation of Current Filaments in Semiconductors with Point Contact and Corbino Disks
    • In this issue
    • SCHWARZ G., SCHÖLL E.: Simulation of Current Filaments in Semiconductors with Point Contact and Corbino Disks. Acta Techn. CSAV 42, (1997). In this issue.
    • Acta Techn. CSAV , vol.42 , pp. 1997
    • Schwarz, G.1    Schöll, E.2
  • 14
    • 0018430047 scopus 로고
    • Electron mobility and free-carrier absorption in GaAs: Determination of the compensation ratio
    • WALUKIEWICZ W., LAGOWSKI L., JASTRZEBSKI L., LICHTENSTEIGER M., GATOS H.C.: Electron mobility and free-carrier absorption in GaAs: Determination of the compensation ratio. J. Appl. Phys. 50, 899-908 (1979).
    • (1979) J. Appl. Phys. , vol.50 , pp. 899-908
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  • 15
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    • Electron mobility in n-type GaAs at 77 K; determination of the compensation ratio
    • WALUKIEWICZ W., LAGOWSKI J., GATOS H.C.: Electron mobility in n-type GaAs at 77 K; determination of the compensation ratio. J. Appl. Phys. 53 (1), 769-770 (1982).
    • (1982) J. Appl. Phys. , vol.53 , Issue.1 , pp. 769-770
    • Walukiewicz, W.1    Lagowski, J.2    Gatos, H.C.3
  • 16
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    • Monte Carlo simulation of impact-ionization-induced breakdown and current filamentation in δ-doped GaAs
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  • 18
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    • Characterization and Properties of Semiconductors
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    • (1994) Handbook on Semiconductors , vol.3
    • Stillman, G.E.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.