The influence of the buried oxide defects on the gate oxide reliability and drain leakage currents of the silicon-on-insulator metal-oxide-semiconductor field-effect transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 12 A, 1997, Pages 7104-7109

  Iwamatsu, Toshiaki ^a   Ipposhi, Takashi ^a   Yamaguchi, Yasuo ^a   Imai, Yukari ^a   Maegawa, Shigeto ^a   Tsubouchi, Natsuro ^a   Nishimura, Tadashi ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

Buried oxide; Gate oxide integrity; Gate oxide reliability; MOSFET; SOI

Indexed keywords

CAPACITORS; CRYSTAL DEFECTS; CRYSTALLINE MATERIALS; GATES (TRANSISTOR); LEAKAGE CURRENTS; LUMINESCENCE; OXIDES; RELIABILITY; SCANNING ELECTRON MICROSCOPY; SILICON ON INSULATOR TECHNOLOGY;

BURIED OXIDE DEFECTS; GATE OXIDE RELIABILITY; SEPARATION BY IMPLANTED OXYGEN;

MOSFET DEVICES;

EID: 0031382122     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.7104     Document Type: Article

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