High-performance power PHEMT for wireless communications

1997 27th European Microwave Conference, EuMC 1997

Volumn 2, Issue , 1997, Pages 1041-1045

  Tkachenko, Y ^a   Kapitan, L ^a   Leung, L ^a   Mitchell, D ^a   Bartle, D ^a  

^a Alpha Industries   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH ELECTRON MOBILITY TRANSISTORS; ELECTRIC BREAKDOWN; ELECTRIC VARIABLES MEASUREMENT; ELECTRONIC DENSITY OF STATES; MESFET DEVICES; OPTIMIZATION; PASSIVATION; PERFORMANCE; RADIO COMMUNICATION; SEMICONDUCTOR DEVICE MANUFACTURE;

ETCH PROFILE; GATE LAG; HIGH BREAKDOWN; HIGH ELECTRON MOBILITY TRANSISTOR (HEMT); OUTPUT POWER DENSITY; POWER PHEMT; WIRELESS COMMUNICATIONS;

WIRELESS TELECOMMUNICATION SYSTEMS; HIGH ELECTRON MOBILITY TRANSISTORS;

DC AND PULSED MEASUREMENT; DEVICE TECHNOLOGY; THREE TERMINAL BREAKDOWN VOLTAGE;

EID: 0031361976     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EUMA.1997.337934     Document Type: Conference Paper

References (9)

1. M. Martinez, E. Schirmann, M. Durlain, D. Halclhin, R. Burton, J-H. Huang, S. Telrani. A. Reyes, D. Green, and N. Cody, " P-HEMTs for low-voltage portable applications using filled gate fabfication process, " in 1996 GaAs IC Symposium Digest, pp. 24 1 -244.
2. M. Martinez, E. Schirmann, M. Durlam, J-H. Huang, S. Telhrani, N. Cody, T. Driver, and K. Barkley, " AIGaAs/InGaAs power P-HEMTs for high-efficiency, low-voltage portable applications, " in 1996 MTT-S Digest, pp. 551-553.
3. Y-L. Lai, E. Chang, C-Y. Chang, T. Chen, T. Liu, S. Wang, T. Chen, and C. Lee, " 5 mm Highpower-density dual-delta-doped power HEMT's for 3 V L-band applications," in IEEE Electron Device Letters, Vol. 17, No. 5, pp. 229-23 1, May 1996.
4. K. Inosako K. Matsunaga Y. Okamoto M. Kuzulhara Highly efficient double-doped heterojunction FET's for battery-operated portable power applications IEEE Electron Device Letters 15 7 248-250 July 1994
5. J. Huang, G. Jackson, S. Slianfield, A. Platzker, P. Saledas, C. Weicher, " An AlGaAs/InGaAs PHEMT withl improved breakdown voltage for X-and Ku-band power applications, " in IEEE Transactions on Mi crowave Theory and Techniques, Vol. 41, No. 5, pp. 752-758, May 1993.
6. J-L. Lee, J. Mun, H. Kim, J-J. Lee, and H-M. Park, " A 68% PAE, GaAs power MESFET operating at 2.3 V drain bias for low distortion power applications," in IEEE Transactions on Electron Devices, Vol. 43, No. 4, pp. 519-525, April 1996.
7. Y. Tkachenko et. al. "Pulsed characterization of MESFET's and PHEMT's ", to be published.
8. Y. Tkachenko, J. Bao, C. Wei, and J. Hwang, "Waveform analysis of GaAs FET breakdowin, " in Automatic RF Techniques Group Conf Dig., May 1995, pp. 139-142.
9. M. Shirokov, R. Leoni, C. Wei, and J. Hwang, "Breakdown effects on the performance and reliability of power MESFETs, " in 1996 GaAs IC Symposium Digest, pp. 34-37. 1101 LPI User's-Manual, ATN Microwave Inc.