III-V nanoelectronics

Microelectronic Engineering

Volumn 32, Issue 1-4 SPEC. ISS., 1996, Pages 283-295

  Beaumont, Steven P ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

Ga(al)as; III V; Lithography; Nanoelectronics

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; HETEROJUNCTIONS; NANOTECHNOLOGY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

NANOELECTRONICS;

MICROELECTRONICS;

EID: 0030232821     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/0167-9317(95)00367-3     Document Type: Article

References (45)

1. J.H. Davies and A.R. Long, eds., Physics of Nanostructures, Osborne, Bristol, 1992, p. 336.
2. C. Weisbuch, and B. Vinter, Quantum Semiconductor Structures-Fundamentals and Applications, Academic Press, San Diego, 1991, p. 252.
3. W. Chen and H. Ahmed, Fabrication of 5-7 nm wide etched lines in silicon using 100 keV electron-beam lithography and polymethyl methacrylate resist, Appl. Phys. Lett. 62 (1993) 1499-1501.
4. T.J. Thornton, M. Pepper, H. Ahmed, D. Andrews et al. One-dimensional conduction in the 2D electron-gas of a GaAs-AlGaAs heterojunction, Phys. Rev. Lett. 56(11) (1986) 1198-1201.
5. J.H. Davies, I.A. Larkin and E.V. Sukhorukov, Modeling the patterned two-dimensional electron gas: Electrostatics, J. Appl. Phys. 77(9) (1995) 4504-4512.
6. J.A. Nixon, J.H. Davies and H.U. Baranger, Breakdown of quantized conductance in point contacts calculated using realistic potentials, Phys. Rev. B 43(15) (1991) 12638-12641.
7. K. Kash, D.D. Mahoney, B.P. Van der Gaag, A.S. Gozdz et al., Observation of quantum dot levels produced by strain modulation of GaAs-AlGaAs quantum wells, J. Vac. Sci. Tech. B 10(4) (1992) 2030-2033.
8. R. Cuscó, E. Skuras, S. Vallis, M.C. Holland et al., Potential modulation under lateral surface superlattices. Superlattices & Microstructures 305(1-3) (1994) 643-647.
9. K.M. Brown, E.H. Linfield, D.A. Ritchie, G.A.C. Jones et al., Resonant-tunnelling between parallel, 2-dimensional electron gases - A new approach to device fabrication using in-situ ion-beam lithography and molecular-beam epitaxy growth, Appl. Phys. Lett. 64(14) (1994) 1827-1829.
10. Y.D. Galeuchet, P. Roentgen, S. Nilsson and V. Graf, Fabrication of buried GaInAs/InP quantum wires by one-step MOVPE growth, in: Science and Engineering of One- and Zero-dimensional semiconductors, Plenum Press, New York, 1990.
11. E. Böckenhoff and H. Benisty, Evolution of 3D growth patterns on nonplanar substrates, J. Crystal Growth 114 (1991) 619-632.
12. E. Kapon, D.M. Huang and R. Bhat, Stimulated emission in semiconductor quantum wire heterostructures Phys. Rev. Lett. 63(4) (1989) 430-433.
13. Tomiya, S., P.M. Petroff, D. Margolese, V.I. Srdanov et al., Germanium loaded zeolite Y: Preparation and characterization, in: MRS meeting, Materials Research Society, Boston, 1992.
14. L. Pfeiffer, H.L. Stormer, A.R. Goni, A. Pinczuk et al., Quantum wires and other novel structures by MBE overgrowth on the cleaved edges of multilayer substrates, Proceedings of the Spie, The International Society for Optical Engineering 9(92) (1992) 23-26.
15. P.D. Wang, N.N. Ledentsov, C.M. Sotomayor-Torres, P.S. Kop'ev et al., Optical characterization of sub-monolayer and monolayer InAs structures grown in a GaAs matrix on (100) and high-index surfaces, Appl. Phys. Lett. 64(12) (1993) 1526-1528.
16. D. Leonard, M. Krishnamurthy, S. Fafard, J.L. Merz et al., Molecular-bean epitaxy growth of quantum dots from strained coherent uniform islands of InGaAs on GaAs, J. Vac. Sci. Tech. B 12(2) (1994) 1063-1066.
17. J.A. Adams, I.G. Thayne, S.P. Beaumont, C.D.W. Wilkinson, et al., Carrier transit delays in Nanometerscale GaAs MESFETs, IEEE Electron Device Lett. 14(2) (1993) 85-87.
18. S.P. Beaumont, The applications of nanotechnology in electronic devices, in: International Conference on InP and Related Compounds, Santa Barbara, 1994.
19. S. Babiker, N. Cameron, A. Asenov and S.P. Beaumont, New evidence for velocity overshoot in a 200 nm pseudomorphic HEMT, in: ESSDERC'95, The Hague, Netherlands, Editions Frontieres, France, 1995.
20. 0.65GaAs/InP HEMTs, in: International Electron Devices Meeting, San Francisco, 1993.
21. L.D. Nguyen, A.S. Brown, M.A. Thompson and L.M. Jelloian, 50 nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistors, IEEE Trans. Electron Device, 39(9) (1992) 2007-2013.
22. T. Enoki, M. Tomizawa, Y. Umeda and Y. Ishii, 0.05 μm-gate InAlAs/InGaAs high electron mobility transistor and reduction of its short-channel effects, Japan. J. Appl. Phys. 33(4) (1994) 798-803.
23. max IEEE Microwave Guided Wave Lett. 5(7) (1995) 230-232.
24. L.M. Jelloian, M. Matloubian, A.S. Brown, L.E. Larson et al., 155- and 213-GHz AlInAs/GaInAs/InP HEMT MMIC Oscillators, IEEE Trans. Microwave Theory Techniques 43(4) (1995) 922-926.
25. S.Y. Chou, D.R. Allee, R.F. Pease and J.S. Harris, Lateral resonant tunnelling transistors employing field-induced quantum-wells and barriers, Proc. IEEE 79(8) (1991) 1131-1139.
26. A. Palevski, U.C.P. and M. Heiblum, A high gan hot-electron device, Appl. Phys. Lett. 55(14) (1989) 1421-1423.
27. H. van Houten, B.J. van Wees, J.E. Mooij, C.W.J. Beenakker et al., Coherent electron focusing in a two-dimensional electron-gas, Europhys. Lett. 5(8) (1988) 721-725.
28. J. Spector, J.S. Weiner, H.L. Stormer, K.W. Baldwin et al., Ballistic electron optics, Surface Sci. 263(1-3) (1992) 240-246.
29. T.J. Thornton, S. Yamada, M. Yamamoto and K. Aihara, Current-voltage characteristics of bend in mesoscopic wire, Electrons Lett. 27(13) (1991) 1177-1178.
30. D.R.S. Cumming, M.C. Holland, J.M.R. Weaver and S.P. Baumont, Amplitude modulation at ratio frequencies using a four-terminal ballistic electron device, Electronics Lett. (1995), to appear.
31. D.A. Wharam, T.J. Thornton, R. Newbury, M. Pepper et al., One dimensional transport and the quantisation of the ballistic resistance, J. Phys. C 21(8) (1988).
32. B.J. van Wees, H. van Houten, C.W.J. Beenakker, J.G. Williamson et al., Phys. Rev. Lett. 24 (1988) 848.
33. C.C. Eugster, J.A. Delalamo, M.J. Rooks and M.R. Melloch, One-dimensional to one-dimensional tunnelling between electron wave-guides 64(23) (1994) 3157-3159.
34. C.C. Eugster, P.R. Nuytkens and J.A. del Alamo, A novel analog-to-digital conversion architecture using electron waveguides, IEEE Trans. Electron Devices 40(11) (1993) 1910-1916.
35. K. Aihara, M. Yamamoto and T.N.L.L. Mizutani, Three-terminal operation of a quantum interference device using a quantum wire with a novel stub structure, International Electron Devices Meeting, Kanagawa, Japan, 1992, 491-494.
36. K. Ismail, S. Washburn and K.Y. Lee, Conductance in very clear quantum wires and rings, Appl. Phys. Lett. 59(16) (1991) 1998-2000.
37. W. Godel, S. Manus, D.A. Wharam, J.P. Kotthaus et al., Ballistic point contacts as microwave mixers, Electronics Lett. 30(12) (1994) 977-979.
38. D.D. Arnone, J.E.F. Frost, C.G. Smith, D.A. Richie et al., Effect of terahertz irradiation on ballistic transport through one-dimensional quantum point contacts, Appl. Phys. Lett. 66(23) (1995) 3149-3151.
39. B. Xing and H.C. Liu, Novel voltage-tunable far-infrared and terahertz detector based on a quantum ballistic channel, Semiconductor Sci. and Techn. 10(8)) (1995) 1139-1144.
40. L.S. Kuzmin, P. Delsing, T. Claeson, K.K. Likharev et al., Single-electron charging effects in one-dimensional arrays of ultrasmall tunnel junctions, Phys. Rev. Lett. 62(2539) (1989).
41. H.v. Houten, C.W.J. Beenakker and A.A.M. Starting, Coulomb-blockade oscillations in semiconductor nanostructures, in: H. Grabert and M. Devoret, eds., Single Charge Tunneling, Plenum Press, New York, 1992 p. 167-216.
42. K. Yano, T. Ishii, T. Hashimoto, T. Kobayashi, et al., A room-temperature single-electron memory device using fine-grain polycrystalline silicon, IEDM Tech. Digest, 1993, 541-544.
43. C. Schönenberger, H,v. Houten and H.C. Donkersloot, Single electron tunnelling observed at room temperature by scanning-tunnelling microscopy, Europhys. Lett. 20(3) (1992) 249-254.
44. Y. Hirayama and S.N.B.R.L. Tarucha, High temperature ballistic transport observed in AlGaAs/InGaAs/ GaAs small four-terminal strucures, Appl. Phys. Lett. 63(17) (1993) 2366-2368.
45. C.S. Lent, P.D. Tougaw, W. Porod and G.H. Bernstein, Quantum cellular automata, Nanotechnology 4(1) (1993) 49-57.