메뉴 건너뛰기




Volumn 36, Issue 12 SUPPL. B, 1997, Pages 7591-7596

Critical dimension control in synchrotron radiation lithography using a negative-tone chemical amplification resist

Author keywords

Chemically amplification resist; Critical dimension; Exposure dosage; Synchrotron radiation lithography; X ray mask

Indexed keywords

AMPLIFICATION; CONTROLLABILITY; MASKS; PHOTORESISTS; SYNCHROTRON RADIATION;

EID: 0031343238     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.7591     Document Type: Article
Times cited : (9)

References (12)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.