Application of SR lithography to 0.14μm device fabrication

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 2723, Issue , 1996, Pages 222-236

  Sumitani, Hiroaki ^a   Itoga, Kenji ^a   Shimano, Hiroki ^a   Aya, Sunao ^a   Yabe, Hideki ^a   Hifumi, Takashi ^a   Watanabe, Hiroshi ^a   Kise, Kouji ^a   Inoue, Masami ^a   Marumoto, Kenji ^a   Nishioka, Yasutaka ^a   Abe, Haruhiko ^a   Mizusawa, Nobutoshi ^a   Saitoh, Kenji ^a   Fukuda, Yasuaki ^a   Uzawa, Shunichi ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

Chemically Amplification Resist; Critical Dimension; Device Fabrication; DRAM; Overlay; SR Lithography; X ray mask

Indexed keywords

ANNEALING; DYNAMIC RANDOM ACCESS STORAGE; ELECTRON BEAMS; MASKS; SYNCHROTRON RADIATION; X RAY ANALYSIS;

SYNCHROTRON RADIATION (SR) LITHOGRAPHY;

LITHOGRAPHY;

EID: 0007958177     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.240474     Document Type: Conference Paper

References (8)

1. 0.13 μm pattern delineation using KrF excimer laser light
2. Total evaluation of W-Ti absorber for X-ray mask
3. Quantitative evaluation of in-plane deformation due to mask holding in X-ray lithography
4. Replicating characteristics by SR lithography
5. Application of X-ray lithography with a single-layer resist process to subquatermicron large scale integrated circuit fabrication
6. Fabrication of high performance 512K static-random access memories in 0.25 μm complementary metal-oxide semiconductor technology using X-ray lithography
7. Sub-half micron metal-oxide-semiconductor device fabrication using a compact synchrotron radiation lithography system
8. Fabrication of 64 Megabit DRAM using X-ray lithography