Mechanisms of impurity deactivation in gaas during reactive ion etching

Physical Review Letters

Volumn 77, Issue 17, 1996, Pages 3601-3604

  Mochizuki, Y ^a   Ishii, T ^a   Mizuta, M ^a   Mochizuki, A ^a   Langer, J M ^b  

^a NEC CORPORATION   (Japan)

^b INSTITUTE OF PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 5244342939     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.77.3601     Document Type: Article

References (12)

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