Fabrication of a nanometer-scale GaAs ridge structure with a 92-MHz anode-coupled reactive ion etcher using Cl2/N2 mixed plasmas

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 1 A, 1996, Pages

  Saitoh, Tadashi ^a   Kanbe, Hiroshi ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHLORINE; NANOSTRUCTURED MATERIALS; NITROGEN; PLASMAS; REACTIVE ION ETCHING; SEMICONDUCTOR DEVICE MANUFACTURE; X RAY PHOTOELECTRON SPECTROSCOPY;

ANISOTROPIC ETCHING; CHLORINE NITROGEN PLASMA; LOW BIAS VOLTAGE; NANOMETER SCALE RIDGE STRUCTURE; VERY HIGH FREQUENCY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0029755373     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l60     Document Type: Article

References (5)