Damage induced by a low-biased 92-MHz anode-coupled reactive ion etcher using chlorine-nitrogen mixed plasmas

Materials Research Society Symposium - Proceedings

Volumn 442, Issue , 1997, Pages 63-68

  Saitoh, Tadashi ^a   Gotoh, Hideki ^a   Sogawa, Tetsuomi ^a   Kanbe, Hiroshi ^a  

^a NTT Basic Research Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHLORINE; MOLECULAR BEAM EPITAXY; NITROGEN; PHOTOLUMINESCENCE; REACTIVE ION ETCHING; SEMICONDUCTING SILICON; SEMICONDUCTOR PLASMAS; SEMICONDUCTOR QUANTUM WELLS;

PHOTOREFLECTANCE MEASUREMENT; WET CHEMICAL ETCHING;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030713743     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)