Direct evidence for stability of tetrahedral interstitial Er in Si up to 900°C

Materials Science Forum

Volumn 258-263, Issue 9993, 1997, Pages 1503-1508

  Wahl, U ^a   Correia, J G ^b   Langouche, G ^a   Marques, J G ^c   Vantomme, A ^a  

^a KU LEUVEN   (Belgium)

^b CERN   (Switzerland)

^c CENTRO DE FÍSICA NUCLEAR DA UNIVERSIDADE DE LISBOA   (Portugal)

Author keywords

Er; Ion implantation; Lattice location; Rare earth doping; Si

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL LATTICES; ELECTRON EMISSION; ERBIUM; HIGH TEMPERATURE EFFECTS; ION IMPLANTATION; ISOTOPES; SINGLE CRYSTALS; THULIUM;

CONVERSION ELECTRON EMISSION CHANNELING;

SEMICONDUCTING SILICON;

EID: 0031339552     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Article

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