Crystal-field splitting of Er+3 in Si

Journal of Applied Physics

Volumn 81, Issue 4, 1997, Pages 1877-1882

  Ren, Shang Yuan ^a,b   Dow, John D ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

^b PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0042498792     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.364043     Document Type: Article

References (11)

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7. 6 levels omitted.
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10. 6 lowest-excited state and a maximum of four lines, such a relaxation appears to be difficult to reconcile with the observed spacings between adjacent levels, which are not very different from one another.
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