Lattice sites and damage annealing of implanted Tm and Er in Si

Materials Research Society Symposium - Proceedings

Volumn 469, Issue , 1997, Pages 407-412

  Wahl, U ^a   Correia, J G ^a   De Wachter, J ^a   Langouche, G ^a   Marques, J G ^a   Moons, R ^a   Vantomme, A ^a  

^a UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; DIFFUSION IN SOLIDS; ELECTRON EMISSION; ERBIUM; ION IMPLANTATION; RADIOISOTOPES; SILICON; SINGLE CRYSTALS; THULIUM;

CONVERSION ELECTRON EMISSION CHANNELING;

CRYSTAL LATTICES;

EID: 0031339185     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-469-407     Document Type: Conference Paper

References (17)