Valence controls and codoping for low-resistivity n-type diamond by ab initio molecular-dynamics simulation

Materials Science Forum

Volumn 258-263, Issue PART 2, 1997, Pages 799-804

  Nishimatsu, Takeshi ^a   Katayama Yoshida, Hiroshi ^a,b   Orita, Nozomi ^c  

^a OSAKA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

ab initio calculation; Codoping; Low resistivity diamond; n type diamond

Indexed keywords

COMPUTER SIMULATION; CRYSTAL ATOMIC STRUCTURE; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRONIC STRUCTURE; ENERGY GAP; MOLECULAR DYNAMICS; NITROGEN; SEMICONDUCTING BORON; SEMICONDUCTOR DOPING;

CODOPING METHODS; VALENCE CONTROL METHOD;

SEMICONDUCTING DIAMONDS;

EID: 0031339539     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.258-263.799     Document Type: Article

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